A Millimeter-Wave (23-32 GHz) Wideband BiCMOS Low-Noise Amplifier

This paper presents a 23–32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load. To our knowledge, the proposed LNA achieves the widest bandwidth with minimum power consumption using 0.18 m BiCMOS technology in K-band. Analytical expressions for the wideband input matching, gain, noise figure and linearity are presented. The LNA is implemented using 0.18 m BiCMOS technology and occupies an area of 0.25 mm . It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5–6.3 dB, linearity higher than 6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.